To produce their mirrors by MOCVD, the team employed a temperature difference of just 150 °C between InGaN and the AlGaN/GaN ...

Toyota is using a power module equipped with Rohm's 4th generation SiC MOSFET bare chip in the traction inverter of its new ...

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent ...

Goleta-based Aeluma, a start-up company combining compound semiconductor nanomaterials with silicon manufacturing, has announced a contract with the US Navy that could accelerate development of ...

Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...

The resulting submicron LEDs, some as small as 250nm by 250nm, initially demonstrated promising electrical characteristics, ...

Veeco Instruments has announced that the University of Michigan has published a breakthrough study on atomic layer deposition ...

Marktech Optoelectronics has announced new high-efficiency 25µm diameter resonant cavity light emitting diodes (RCLEDs) with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...

RF and mmWave specialisr Filtronic has launched its latest V-band high-frequency amplifier system, Prometheus, at the ...

A perovskite image sensor developed by Maksym Kovalenko and his team of researchers at ETH Zurich and Empa, could take better ...