Using traditional AI services can expose sensitive information, highlighting critical security concerns. Blockchain can ...
Abstract: We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer ...
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Abstract: We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the $\Delta \text{V}_{ ...
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