News

The University of Sheffield has won a £7 million investment from the UK's Engineering and Physical Sciences Council (EPRSC) ...
At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...
The VO1401AEFTR and VOR1003M4T combine high continuous load current of 550 mA and 5 A, respectively, with load voltages of 60 ...
Cambridge GaN Devices (CGD) will demonstrate at PCIM how GaN technology is delivering improved performance in higher power ...
A team of UK scientists at Queen Mary University of London, University of Nottingham and University of Glasgow has received a ...
Infineon has launched its new CoolSiC MOSFET 750 V G2 technology, designed to deliver improved system efficiency and ...
As III-V Epi celebrates its fifth birthday, the UK-based company says it has demonstrated consistent growth, establishing its ...
Finland-based Beneq has announced that its Transform ALD cluster tool has been qualified for volume production of GaN-based ...
Semikron Danfoss module uses Rohm 2kV SiC MOSFETs for SMA’s new large scale solar system SMA Solar Technology AG, a global ...
Queensland University of Technology (QUT) researchers have identified a new material which could be used as a flexible ...
The partnership combines Partstat's expertise in inventory management and storage with WIN's semiconductor manufacturing ...
Navitas Semiconductor has announced a new family of GaNSense motor drive ICs targeting home appliances and industrial drives ...