Dublin, Nov. 14, 2024 (GLOBE NEWSWIRE) -- The "Silicon Carbide (SiC) Diodes Market 2024" report has been added to ResearchAndMarkets.com's offering. This Silicon Carbide (SiC) Diodes market report ...
Edward Ong, senior product marketing manager at Power Integrations said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system ...
The LQA10T300 is a member of Power Integrations’ Qspeed family. This Q-series diode has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and ...
This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Infineon Technologies AG introduced the highly efficient, fast recovery 650V Rapid 1 and Rapid 2 silicon diode families. The high performance devices, which combining Infineon's ultrathin wafer ...
A new diode looks set to steal the humble LED's thunder. Dubbed a diode for light, and crafted using standard silicon chip fabrication techniques, this is a key discovery that will pave the path to ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
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