A Japanese-German research team has fabricated a TOPCon PV device by replacing common ion implantation techniques with plasma immersion ion implantation (PIII). The resulting device showed almost the ...
The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...
Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...
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