Neubiberg, Germany: The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...
SHENZHEN, GUANGDONG, CHINA, June 22, 2026 /EINPresswire.com/ -- In a rapidly evolving semiconductor landscape, GNS ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...
Vacuum transistors — where electrons travel between the contacts via a vacuum channel instead of a semiconductor channel — are still used in specialized electronics with very high operating voltages, ...
In this work, we focus on exploring the capabilities and limitations of TFT technology to enable Watt-level power delivery by means of one vital power delivery circuit block, the boost DC-DC converter ...
Metal-oxide semiconductor field-effect transistors (MOSFETs) see common use in applications ranging from the very small (like CPU transistors) to very large (power) switching applications. Although ...
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